TPH6R30ANL,L1Q
Framleiðandi Vöru númer:

TPH6R30ANL,L1Q

Product Overview

Framleiðandi:

Toshiba Semiconductor and Storage

Völu númer:

TPH6R30ANL,L1Q-DG

Lýsing:

MOSFET N-CH 100V 66A/45A 8SOP
Mikilvægar upplýsingar:
N-Channel 100 V 66A (Ta), 45A (Tc) 2.5W (Ta), 54W (Tc) Surface Mount 8-SOP Advance (5x5)

Birgðir:

1336 Stk Nýtt Upprunalegt Á Lager
12890900
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TPH6R30ANL,L1Q Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Toshiba Electronic Devices and Storage Corporation
Pakkning
Tape & Reel (TR)
Röð
U-MOSVIII-H
Staða vöru
Active
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
100 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds á (Max) @ Id, Vgs
6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 500µA
Hliðhleðsla (Qg) (hámark) @ Vgs
55 nC @ 10 V
Vgs (hámark)
±20V
Inntak rýmd (Ciss) (hámark) @ Vds
4300 pF @ 50 V
FET eiginleiki
-
Afl leiðni (hámark)
2.5W (Ta), 54W (Tc)
Hitastig rekstrar
150°C
Gerð uppsetningar
Surface Mount
Birgir tæki pakki
8-SOP Advance (5x5)
Pakki / hulstur
8-PowerVDFN
Grunnvörunúmer
TPH6R30

Gagnaablað & Skjöl

Gagnablöð
TPH6R30ANL

Aukainformation

Venjulegur pakki
5,000
Önnur nöfn
264-TPH6R30ANL,L1QDKR
264-TPH6R30ANL,L1QCT
TPH6R30ANLL1Q-DG
TPH6R30ANLL1Q
264-TPH6R30ANL,L1QTR

Umhverfis- og útflutningsflokkun

RoHS staða
RoHS Compliant
Rakanæmi (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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