IPB80N03S4L02ATMA1
Framleiðandi Vöru númer:

IPB80N03S4L02ATMA1

Product Overview

Framleiðandi:

Infineon Technologies

Völu númer:

IPB80N03S4L02ATMA1-DG

Lýsing:

MOSFET N-CH 30V 80A TO263-3
Mikilvægar upplýsingar:
N-Channel 30 V 80A (Tc) 136W (Tc) Surface Mount PG-TO263-3-2

Birgðir:

12801219
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IPB80N03S4L02ATMA1 Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Infineon Technologies
Pakkning
Tape & Reel (TR)
Röð
OptiMOS™
Staða vöru
Active
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
30 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds á (Max) @ Id, Vgs
2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2.2V @ 90µA
Hliðhleðsla (Qg) (hámark) @ Vgs
140 nC @ 10 V
Vgs (hámark)
±16V
Inntak rýmd (Ciss) (hámark) @ Vds
9750 pF @ 25 V
FET eiginleiki
-
Afl leiðni (hámark)
136W (Tc)
Hitastig rekstrar
-55°C ~ 175°C (TJ)
Gerð uppsetningar
Surface Mount
Birgir tæki pakki
PG-TO263-3-2
Pakki / hulstur
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grunnvörunúmer
IPB80N

Gagnaablað & Skjöl

HTML upplýsingaskjal
Gagnaplakks
Gagnablöð

Aukainformation

Venjulegur pakki
1,000
Önnur nöfn
IPB80N03S4L-02INDKR-DG
IPB80N03S4L-02INTR-DG
IPB80N03S4L-02INCT
IPB80N03S4L02ATMA1TR
IPB80N03S4L-02INCT-DG
INFINFIPB80N03S4L02ATMA1
IPB80N03S4L-02INDKR
2156-IPB80N03S4L02ATMA1
SP000273282
IPB80N03S4L02ATMA1CT
IPB80N03S4L02ATMA1DKR
IPB80N03S4L-02INTR
IPB80N03S4L-02
IPB80N03S4L02
IPB80N03S4L-02-DG

Umhverfis- og útflutningsflokkun

RoHS staða
ROHS3 Compliant
Rakanæmi (MSL)
1 (Unlimited)
REACH staða
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
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