IPB072N15N3GE8187ATMA1
Framleiðandi Vöru númer:

IPB072N15N3GE8187ATMA1

Product Overview

Framleiðandi:

Infineon Technologies

Völu númer:

IPB072N15N3GE8187ATMA1-DG

Lýsing:

MOSFET N-CH 150V 100A TO263-3
Mikilvægar upplýsingar:
N-Channel 150 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Birgðir:

RFQ á netinu
12800424
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IPB072N15N3GE8187ATMA1 Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Infineon Technologies
Pakkning
-
Röð
OptiMOS™
Staða vöru
Obsolete
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
150 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds á (Max) @ Id, Vgs
7.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Hliðhleðsla (Qg) (hámark) @ Vgs
93 nC @ 10 V
Vgs (hámark)
±20V
Inntak rýmd (Ciss) (hámark) @ Vds
5470 pF @ 75 V
FET eiginleiki
-
Afl leiðni (hámark)
300W (Tc)
Hitastig rekstrar
-55°C ~ 175°C (TJ)
Gerð uppsetningar
Surface Mount
Birgir tæki pakki
PG-TO263-3-2
Pakki / hulstur
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Grunnvörunúmer
IPB072N

Gagnaablað & Skjöl

HTML upplýsingaskjal
IPB072N15N3GE8187ATMA1-DG
Gagnaplakks
IPB072N15N3GE8187ATMA1
Gagnablöð
IPx0(72,75)N15N3 G

Aukainformation

Venjulegur pakki
1,000
Önnur nöfn
IPB072N15N3 G E8187-DG
IPB072N15N3 G E8187TR-DG
IPB072N15N3 G E8187CT
IPB072N15N3 G E8187CT-DG
IPB072N15N3GE8187
IPB072N15N3 G E8187DKR
IPB072N15N3GE8187ATMA1CT
IPB072N15N3 G E8187
IPB072N15N3GE8187ATMA1TR
SP000938816
IPB072N15N3GE8187ATMA1DKR
IPB072N15N3 G E8187DKR-DG

Umhverfis- og útflutningsflokkun

Rakanæmi (MSL)
1 (Unlimited)
REACH staða
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Valkostamódeli

Partanúmer
IPB072N15N3GATMA1
FRAMLEIÐANDI
Infineon Technologies
Fjöldi í boði
4910
HLUTARNÁMR
IPB072N15N3GATMA1-DG
Einingaverð
2.99
VÖRUVAL
Parametric Equivalent
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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