HUF75639S3ST
Framleiðandi Vöru númer:

HUF75639S3ST

Product Overview

Framleiðandi:

Fairchild Semiconductor

Völu númer:

HUF75639S3ST-DG

Lýsing:

POWER FIELD-EFFECT TRANSISTOR, 5
Mikilvægar upplýsingar:
N-Channel 100 V 56A (Tc) 200W (Tc) Surface Mount TO-263 (D2PAK)

Birgðir:

8245 Stk Nýtt Upprunalegt Á Lager
12947317
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HUF75639S3ST Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Pakkning
Bulk
Röð
UltraFET™
Staða vöru
Active
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
100 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds á (Max) @ Id, Vgs
25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Hliðhleðsla (Qg) (hámark) @ Vgs
130 nC @ 20 V
Vgs (hámark)
±20V
Inntak rýmd (Ciss) (hámark) @ Vds
2000 pF @ 25 V
FET eiginleiki
-
Afl leiðni (hámark)
200W (Tc)
Hitastig rekstrar
-55°C ~ 175°C (TJ)
Gerð uppsetningar
Surface Mount
Birgir tæki pakki
TO-263 (D2PAK)
Pakki / hulstur
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Gagnaablað & Skjöl

Gagnablöð
Datasheet

Aukainformation

Venjulegur pakki
235
Önnur nöfn
FAIFSCHUF75639S3ST
2156-HUF75639S3ST

Umhverfis- og útflutningsflokkun

ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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