FQPF7N65CYDTU
Framleiðandi Vöru númer:

FQPF7N65CYDTU

Product Overview

Framleiðandi:

Fairchild Semiconductor

Völu númer:

FQPF7N65CYDTU-DG

Lýsing:

POWER FIELD-EFFECT TRANSISTOR, N
Mikilvægar upplýsingar:
N-Channel 650 V 7A (Tc) 52W (Tc) Through Hole TO-220F-3 (Y-Forming)

Birgðir:

1572 Stk Nýtt Upprunalegt Á Lager
12946671
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FQPF7N65CYDTU Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Pakkning
Bulk
Röð
QFET®
Staða vöru
Active
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
650 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds á (Max) @ Id, Vgs
1.4Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Hliðhleðsla (Qg) (hámark) @ Vgs
36 nC @ 10 V
Vgs (hámark)
±30V
Inntak rýmd (Ciss) (hámark) @ Vds
1245 pF @ 25 V
FET eiginleiki
-
Afl leiðni (hámark)
52W (Tc)
Hitastig rekstrar
-55°C ~ 150°C (TJ)
Gerð uppsetningar
Through Hole
Birgir tæki pakki
TO-220F-3 (Y-Forming)
Pakki / hulstur
TO-220-3 Full Pack, Formed Leads

Gagnaablað & Skjöl

Gagnablöð
FQPF7N65C Datasheet

Aukainformation

Venjulegur pakki
366
Önnur nöfn
2156-FQPF7N65CYDTU
FAIFSCFQPF7N65CYDTU

Umhverfis- og útflutningsflokkun

ECCN
EAR99
HTSUS
8542.39.0001
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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