SIHP35N60E-BE3
Framleiðandi Vöru númer:

SIHP35N60E-BE3

Product Overview

Framleiðandi:

Vishay Siliconix

Völu númer:

SIHP35N60E-BE3-DG

Lýsing:

N-CHANNEL 600V
Mikilvægar upplýsingar:
N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-220AB

Birgðir:

131 Stk Nýtt Upprunalegt Á Lager
12977763
Óska eftir tilboði
Magn
Minimum 1
num_del num_add
*
*
*
*
(*) er skylda
Við munum hafa samband við þig innan 24 klukkustunda
STILLTA

SIHP35N60E-BE3 Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Vishay
Pakkning
Tube
Röð
E
Staða vöru
Active
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
600 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds á (Max) @ Id, Vgs
94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Hliðhleðsla (Qg) (hámark) @ Vgs
132 nC @ 10 V
Vgs (hámark)
±30V
Inntak rýmd (Ciss) (hámark) @ Vds
2760 pF @ 100 V
FET eiginleiki
-
Afl leiðni (hámark)
250W (Tc)
Hitastig rekstrar
-55°C ~ 150°C (TJ)
Gerð uppsetningar
Through Hole
Birgir tæki pakki
TO-220AB
Pakki / hulstur
TO-220-3

Gagnaablað & Skjöl

Gagnablöð
SIHP35N60E

Aukainformation

Venjulegur pakki
1,000
Önnur nöfn
742-SIHP35N60E-BE3CT
742-SIHP35N60E-BE3CT-DG
742-SIHP35N60E-BE3
742-SIHP35N60E-BE3TR-DG
742-SIHP35N60E-BE3DKRINACTIVE
742-SIHP35N60E-BE3CTINACTIVE
742-SIHP35N60E-BE3TR

Umhverfis- og útflutningsflokkun

Rakanæmi (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Tengdar vörur
vishay-siliconix

SQJ420EP-T1_BE3

N-CHANNEL 40-V (D-S) 175C MOSFET

vishay-siliconix

SIHFU310-GE3

MOSFET N-CHANNEL 400V

vishay-siliconix

SIHFR9310TRL-GE3

MOSFET P-CHANNEL 400V

vishay-siliconix

SI2318CDS-T1-BE3

N-CHANNEL 40-V (D-S) MOSFET