SIE810DF-T1-GE3

Framleiðandi Vöru númer:

SIE810DF-T1-GE3

Product Overview

Framleiðandi:

Vishay Siliconix

Völu númer:

SIE810DF-T1-GE3-DG

Lýsing:

MOSFET N-CH 20V 60A 10POLARPAK

Mikilvægar upplýsingar:

N-Channel 20 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Birgðir:

RFQ á netinu

12920451

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STILLTA

SIE810DF-T1-GE3 Tæknilegar forskriftir

Flokkur

FETs, MOSFETs, Einn FET, MOSFET

Framleiðandi

Vishay

Pakkning

Tape & Reel (TR)

Röð

TrenchFET®

Staða vöru

Last Time Buy

FET gerð

N-Channel

Tækni

MOSFET (Metal Oxide)

Frárennsli til uppruna spennu (Vdss)

20 V

Núverandi - Stöðugt frárennsli (Id) @ 25 °C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds á (Max) @ Id, Vgs

1.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Hliðhleðsla (Qg) (hámark) @ Vgs

300 nC @ 10 V

Vgs (hámark)

±12V

Inntak rýmd (Ciss) (hámark) @ Vds

13000 pF @ 10 V

FET eiginleiki

-

Afl leiðni (hámark)

5.2W (Ta), 125W (Tc)

Hitastig rekstrar

-55°C ~ 150°C (TJ)

Gerð uppsetningar

Surface Mount

Birgir tæki pakki

10-PolarPAK® (L)

Pakki / hulstur

10-PolarPAK® (L)

Grunnvörunúmer

SIE810

Gagnaablað & Skjöl

HTML upplýsingaskjal

SIE810DF-T1-GE3-DG

Gagnaplakks

SIE810DF-T1-GE3

Gagnablöð

Aukainformation

Venjulegur pakki

3,000

Önnur nöfn

SIE810DF-T1-GE3CT

SIE810DF-T1-GE3DKR

SIE810DF-T1-GE3-DG

SIE810DF-T1-GE3TR

Umhverfis- og útflutningsflokkun

RoHS staða

ROHS3 Compliant

Rakanæmi (MSL)

1 (Unlimited)

ECCN

EAR99

HTSUS

8541.29.0095

DIGI vottun

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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