TPN19008QM,LQ

Framleiðandi Vöru númer:

TPN19008QM,LQ

Product Overview

Framleiðandi:

Toshiba Semiconductor and Storage

Völu númer:

TPN19008QM,LQ-DG

Lýsing:

MOSFET N-CH 80V 34A 8TSON

Mikilvægar upplýsingar:

N-Channel 80 V 34A (Tc) 630mW (Ta), 57W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Birgðir:

10887 Stk Nýtt Upprunalegt Á Lager

12968133

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STILLTA

TPN19008QM,LQ Tæknilegar forskriftir

Flokkur

FETs, MOSFETs, Einn FET, MOSFET

Framleiðandi

Toshiba Electronic Devices and Storage Corporation

Pakkning

Tape & Reel (TR)

Röð

U-MOSX-H

Staða vöru

Active

FET gerð

N-Channel

Tækni

MOSFET (Metal Oxide)

Frárennsli til uppruna spennu (Vdss)

80 V

Núverandi - Stöðugt frárennsli (Id) @ 25 °C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds á (Max) @ Id, Vgs

19mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

3.5V @ 200µA

Hliðhleðsla (Qg) (hámark) @ Vgs

16 nC @ 10 V

Vgs (hámark)

±20V

Inntak rýmd (Ciss) (hámark) @ Vds

1400 pF @ 40 V

FET eiginleiki

-

Afl leiðni (hámark)

630mW (Ta), 57W (Tc)

Hitastig rekstrar

175°C

Gerð uppsetningar

Surface Mount

Birgir tæki pakki

8-TSON Advance (3.1x3.1)

Pakki / hulstur

8-PowerVDFN

Grunnvörunúmer

TPN19008

Gagnaablað & Skjöl

HTML upplýsingaskjal

TPN19008QM,LQ-DG

Gagnaplakks

Gagnablöð

Aukainformation

Venjulegur pakki

3,000

Önnur nöfn

264-TPN19008QMLQTR

264-TPN19008QMLQDKR

TPN19008QM,LQ(S

264-TPN19008QMLQCT

Umhverfis- og útflutningsflokkun

Rakanæmi (MSL)

1 (Unlimited)

ECCN

EAR99

HTSUS

8541.29.0095

DIGI vottun

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Tengdar vörur

sanyo

MCH6337-TL-E

POWER FIELD-EFFECT TRANSISTOR, P

fairchild-semiconductor

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FDMS5361 - N-CHANNEL POWERTRENCH

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MCU60P04-TP

P-CHANNEL MOSFET,DPAK

vishay-siliconix

SIHH105N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST