TPH1110ENH,L1Q

Framleiðandi Vöru númer:

TPH1110ENH,L1Q

Product Overview

Framleiðandi:

Toshiba Semiconductor and Storage

Völu númer:

TPH1110ENH,L1Q-DG

Lýsing:

MOSFET N-CH 200V 7.2A 8SOP

Mikilvægar upplýsingar:

N-Channel 200 V 7.2A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)

Birgðir:

RFQ á netinu

12890764

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TPH1110ENH,L1Q Tæknilegar forskriftir

Flokkur

FETs, MOSFETs, Einn FET, MOSFET

Framleiðandi

Toshiba Electronic Devices and Storage Corporation

Pakkning

Tape & Reel (TR)

Röð

U-MOSVIII-H

Staða vöru

Active

FET gerð

N-Channel

Tækni

MOSFET (Metal Oxide)

Frárennsli til uppruna spennu (Vdss)

200 V

Núverandi - Stöðugt frárennsli (Id) @ 25 °C

7.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds á (Max) @ Id, Vgs

114mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id

4V @ 200µA

Hliðhleðsla (Qg) (hámark) @ Vgs

7 nC @ 10 V

Vgs (hámark)

±20V

Inntak rýmd (Ciss) (hámark) @ Vds

600 pF @ 100 V

FET eiginleiki

-

Afl leiðni (hámark)

1.6W (Ta), 42W (Tc)

Hitastig rekstrar

150°C (TJ)

Gerð uppsetningar

Surface Mount

Birgir tæki pakki

8-SOP Advance (5x5)

Pakki / hulstur

8-PowerVDFN

Grunnvörunúmer

TPH1110

Gagnaablað & Skjöl

Gagnablöð

Aukainformation

Venjulegur pakki

5,000

Önnur nöfn

TPH1110ENH,L1Q(M

TPH1110ENHL1QCT

TPH1110ENHL1QDKR

TPH1110ENHL1QTR

Umhverfis- og útflutningsflokkun

RoHS staða

RoHS Compliant

Rakanæmi (MSL)

1 (Unlimited)

ECCN

EAR99

HTSUS

8541.29.0095

DIGI vottun

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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