TK6R8A08QM,S4X

Framleiðandi Vöru númer:

TK6R8A08QM,S4X

Product Overview

Framleiðandi:

Toshiba Semiconductor and Storage

Völu númer:

TK6R8A08QM,S4X-DG

Lýsing:

UMOS10 TO-220SIS 80V 6.8MOHM

Mikilvægar upplýsingar:

N-Channel 80 V 58A (Tc) 41W (Tc) Through Hole TO-220SIS

Birgðir:

40 Stk Nýtt Upprunalegt Á Lager

12965739

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STILLTA

TK6R8A08QM,S4X Tæknilegar forskriftir

Flokkur

FETs, MOSFETs, Einn FET, MOSFET

Framleiðandi

Toshiba Electronic Devices and Storage Corporation

Pakkning

Tube

Röð

U-MOSX-H

Staða vöru

Active

FET gerð

N-Channel

Tækni

MOSFET (Metal Oxide)

Frárennsli til uppruna spennu (Vdss)

80 V

Núverandi - Stöðugt frárennsli (Id) @ 25 °C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds á (Max) @ Id, Vgs

6.8mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

3.5V @ 500µA

Hliðhleðsla (Qg) (hámark) @ Vgs

39 nC @ 10 V

Vgs (hámark)

±20V

Inntak rýmd (Ciss) (hámark) @ Vds

2700 pF @ 40 V

FET eiginleiki

-

Afl leiðni (hámark)

41W (Tc)

Hitastig rekstrar

175°C

Gerð uppsetningar

Through Hole

Birgir tæki pakki

TO-220SIS

Pakki / hulstur

TO-220-3 Full Pack

Gagnaablað & Skjöl

HTML upplýsingaskjal

TK6R8A08QM,S4X-DG

Gagnaplakks

Gagnablöð

Aukainformation

Venjulegur pakki

50

Önnur nöfn

264-TK6R8A08QM,S4X

TK6R8A08QM,S4X(S

264-TK6R8A08QM,S4X-DG

264-TK6R8A08QMS4X

Umhverfis- og útflutningsflokkun

RoHS staða

ROHS3 Compliant

Rakanæmi (MSL)

1 (Unlimited)

ECCN

EAR99

HTSUS

8541.29.0095

DIGI vottun

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

Tengdar vörur

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FSS2100-G

FSS2100-G

vishay-siliconix

SIJH440E-T1-GE3

MOSFET N-CH 40V 200A PPAK 8 X 8