TK1K7A60F,S4X
Framleiðandi Vöru númer:

TK1K7A60F,S4X

Product Overview

Framleiðandi:

Toshiba Semiconductor and Storage

Völu númer:

TK1K7A60F,S4X-DG

Lýsing:

X35 PB-F POWER MOSFET TRANSISTOR
Mikilvægar upplýsingar:
N-Channel 600 V 4A (Ta) 35W (Tc) Through Hole TO-220SIS

Birgðir:

1 Stk Nýtt Upprunalegt Á Lager
12920875
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TK1K7A60F,S4X Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Toshiba Electronic Devices and Storage Corporation
Pakkning
Tube
Röð
-
Staða vöru
Active
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
600 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds á (Max) @ Id, Vgs
1.7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 460µA
Hliðhleðsla (Qg) (hámark) @ Vgs
16 nC @ 10 V
Vgs (hámark)
±30V
Inntak rýmd (Ciss) (hámark) @ Vds
560 pF @ 300 V
FET eiginleiki
-
Afl leiðni (hámark)
35W (Tc)
Hitastig rekstrar
150°C
Gerð uppsetningar
Through Hole
Birgir tæki pakki
TO-220SIS
Pakki / hulstur
TO-220-3 Full Pack
Grunnvörunúmer
TK1K7A60

Gagnaablað & Skjöl

HTML upplýsingaskjal
TK1K7A60F,S4X-DG
Gagnaplakks
TK1K7A60F,S4X
Gagnablöð
TK1K0A60F

Aukainformation

Venjulegur pakki
50
Önnur nöfn
264-TK1K7A60FS4X
TK1K7A60F,S4X(S

Umhverfis- og útflutningsflokkun

RoHS staða
ROHS3 Compliant
Rakanæmi (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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