RN2117(TE85L,F)
Framleiðandi Vöru númer:

RN2117(TE85L,F)

Product Overview

Framleiðandi:

Toshiba Semiconductor and Storage

Völu númer:

RN2117(TE85L,F)-DG

Lýsing:

TRANS PREBIAS PNP 50V 0.1A SSM
Mikilvægar upplýsingar:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM

Birgðir:

2930 Stk Nýtt Upprunalegt Á Lager
13275879
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RN2117(TE85L,F) Tæknilegar forskriftir

Flokkur
Bipolar (BJT), Einn, Fyrir-Spennt Bipolar Transistorer
Framleiðandi
Toshiba Electronic Devices and Storage Corporation
Pakkning
Tape & Reel (TR)
Röð
-
Staða vöru
Active
Gerð smára
PNP - Pre-Biased
Straumur - Safnari (Ic) (Max)
100 mA
Spenna - Sundurliðun safnara (hámark)
50 V
Viðnám - Base (R1)
10 kOhms
Viðnám - Emitter Base (R2)
4.7 kOhms
DC straumstyrkur (hFE) (mín.) @ Ic, Vce
30 @ 10mA, 5V
Vce mettun (hámark) @ Ib, Ic
300mV @ 250µA, 5mA
Núverandi - Collector Cutoff (hámark)
500nA
Tíðni - Umskipti
200 MHz
Kraftur - hámark
100 mW
Gerð uppsetningar
Surface Mount
Pakki / hulstur
SC-75, SOT-416
Birgir tæki pakki
SSM
Grunnvörunúmer
RN2117

Gagnaablað & Skjöl

Gagnablöð
RN2114MFV Thru RN2118MFV

Aukainformation

Venjulegur pakki
3,000
Önnur nöfn
264-RN2117(TE85LF)TR
264-RN2117(TE85LF)DKR
264-RN2117(TE85LF)CT

Umhverfis- og útflutningsflokkun

Rakanæmi (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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