RN2102ACT(TPL3)
Framleiðandi Vöru númer:

RN2102ACT(TPL3)

Product Overview

Framleiðandi:

Toshiba Semiconductor and Storage

Völu númer:

RN2102ACT(TPL3)-DG

Lýsing:

TRANS PREBIAS PNP 50V 0.08A CST3
Mikilvægar upplýsingar:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3

Birgðir:

RFQ á netinu
12891337
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RN2102ACT(TPL3) Tæknilegar forskriftir

Flokkur
Bipolar (BJT), Einn, Fyrir-Spennt Bipolar Transistorer
Framleiðandi
Toshiba Electronic Devices and Storage Corporation
Pakkning
-
Röð
-
Staða vöru
Active
Gerð smára
PNP - Pre-Biased
Straumur - Safnari (Ic) (Max)
80 mA
Spenna - Sundurliðun safnara (hámark)
50 V
Viðnám - Base (R1)
10 kOhms
Viðnám - Emitter Base (R2)
10 kOhms
DC straumstyrkur (hFE) (mín.) @ Ic, Vce
50 @ 10mA, 5V
Vce mettun (hámark) @ Ib, Ic
150mV @ 250µA, 5mA
Núverandi - Collector Cutoff (hámark)
500nA
Kraftur - hámark
100 mW
Gerð uppsetningar
Surface Mount
Pakki / hulstur
SC-101, SOT-883
Birgir tæki pakki
CST3
Grunnvörunúmer
RN2102

Aukainformation

Venjulegur pakki
10,000
Önnur nöfn
RN2102ACT(TPL3)DKR
RN2102ACT(TPL3)CT
RN2102ACT(TPL3)TR

Umhverfis- og útflutningsflokkun

RoHS staða
RoHS Compliant
Rakanæmi (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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