RN1910FE,LF(CT
Framleiðandi Vöru númer:

RN1910FE,LF(CT

Product Overview

Framleiðandi:

Toshiba Semiconductor and Storage

Völu númer:

RN1910FE,LF(CT-DG

Lýsing:

TRANS 2NPN PREBIAS 0.1W ES6
Mikilvægar upplýsingar:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Birgðir:

4750 Stk Nýtt Upprunalegt Á Lager
12889497
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RN1910FE,LF(CT Tæknilegar forskriftir

Flokkur
Bipolar (BJT), Bipolar rafeindatengingar, Forröggaðar
Framleiðandi
Toshiba Electronic Devices and Storage Corporation
Pakkning
Tape & Reel (TR)
Röð
-
Staða vöru
Active
Gerð smára
2 NPN - Pre-Biased (Dual)
Straumur - Safnari (Ic) (Max)
100mA
Spenna - Sundurliðun safnara (hámark)
50V
Viðnám - Base (R1)
4.7kOhms
Viðnám - Emitter Base (R2)
-
DC straumstyrkur (hFE) (mín.) @ Ic, Vce
120 @ 1mA, 5V
Vce mettun (hámark) @ Ib, Ic
300mV @ 250µA, 5mA
Núverandi - Collector Cutoff (hámark)
100nA (ICBO)
Tíðni - Umskipti
250MHz
Kraftur - hámark
100mW
Gerð uppsetningar
Surface Mount
Pakki / hulstur
SOT-563, SOT-666
Birgir tæki pakki
ES6
Grunnvörunúmer
RN1910

Gagnaablað & Skjöl

Aukainformation

Venjulegur pakki
4,000
Önnur nöfn
RN1910FE,LF(CB
RN1910FELF(CTTR
RN1910FELF(CTDKR
RN1910FELF(CTCT

Umhverfis- og útflutningsflokkun

RoHS staða
ROHS3 Compliant
Rakanæmi (MSL)
1 (Unlimited)
REACH staða
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI vottun
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