Framleiðandi Vöru númer:
RN1110MFV,L3F
Product Overview
Framleiðandi:
Toshiba Semiconductor and Storage
Völu númer:
RN1110MFV,L3F-DG
Lýsing:
TRANS PREBIAS NPN 50V 0.1A VESM
Mikilvægar upplýsingar:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Birgðir:
8000 Stk Nýtt Upprunalegt Á Lager
12891181
Óska eftir tilboði
Magn
Minimum 1
Minimum 1
(*) er skylda
Við munum hafa samband við þig innan 24 klukkustunda
Við munum hafa samband við þig innan 24 klukkustunda
STILLTA
RN1110MFV,L3F Tæknilegar forskriftir
Flokkur
Bipolar (BJT), Einn, Fyrir-Spennt Bipolar Transistorer
Framleiðandi
Toshiba Electronic Devices and Storage Corporation
Pakkning
Tape & Reel (TR)
Röð
-
Staða vöru
Active
Gerð smára
NPN - Pre-Biased
Straumur - Safnari (Ic) (Max)
100 mA
Spenna - Sundurliðun safnara (hámark)
50 V
Viðnám - Base (R1)
4.7 kOhms
DC straumstyrkur (hFE) (mín.) @ Ic, Vce
120 @ 1mA, 5V
Vce mettun (hámark) @ Ib, Ic
300mV @ 500µA, 5mA
Núverandi - Collector Cutoff (hámark)
100nA (ICBO)
Kraftur - hámark
150 mW
Gerð uppsetningar
Surface Mount
Pakki / hulstur
SOT-723
Birgir tæki pakki
VESM
Grunnvörunúmer
RN1110
Aukainformation
Venjulegur pakki
8,000
Önnur nöfn
264-RN1110MFV,L3FCT
RN1110MFV(TL3T)TR
RN1110MFV(TL3T)DKR-DG
RN1110MFV(TL3,T)
RN1110MFVL3FTR
RN1110MFVTL3T
RN1110MFVL3F
RN1110MFVL3FTR-DG
RN1110MFVL3FDKR
RN1110MFVL3FDKR-DG
RN1110MFV,L3F(T
RN1110MFV(TL3T)CT
RN1110MFV(TL3T)DKR
RN1110MFV,L3F(B
RN1110MFV(TL3T)CT-DG
RN1110MFVL3FCT
RN1110MFVL3FINACTIVE
RN1110MFV(TL3T)TR-DG
RN1110MFVL3FCT-DG
RN1110MFVL3F-DG
264-RN1110MFV,L3FTR
264-RN1110MFV,L3FDKR
Umhverfis- og útflutningsflokkun
RoHS staða
ROHS3 Compliant
Rakanæmi (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI vottun
Tengdar vörur
RN2104ACT(TPL3)
TRANS PREBIAS PNP 50V 0.08A CST3
RN2112,LF(CT
TRANS PREBIAS PNP 50V 0.1A SSM
RN2108(T5L,F,T)
TRANS PREBIAS PNP 50V 0.1A SSM
