RN1106MFV,L3F(CT
Framleiðandi Vöru númer:

RN1106MFV,L3F(CT

Product Overview

Framleiðandi:

Toshiba Semiconductor and Storage

Völu númer:

RN1106MFV,L3F(CT-DG

Lýsing:

TRANS PREBIAS NPN 50V 0.1A VESM
Mikilvægar upplýsingar:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Birgðir:

7979 Stk Nýtt Upprunalegt Á Lager
13275904
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RN1106MFV,L3F(CT Tæknilegar forskriftir

Flokkur
Bipolar (BJT), Einn, Fyrir-Spennt Bipolar Transistorer
Framleiðandi
Toshiba Electronic Devices and Storage Corporation
Pakkning
Tape & Reel (TR)
Röð
-
Staða vöru
Active
Gerð smára
NPN - Pre-Biased
Straumur - Safnari (Ic) (Max)
100 mA
Spenna - Sundurliðun safnara (hámark)
50 V
Viðnám - Base (R1)
4.7 kOhms
Viðnám - Emitter Base (R2)
47 kOhms
DC straumstyrkur (hFE) (mín.) @ Ic, Vce
80 @ 1mA, 5V
Vce mettun (hámark) @ Ib, Ic
300mV @ 500µA, 5mA
Núverandi - Collector Cutoff (hámark)
500nA
Kraftur - hámark
150 mW
Gerð uppsetningar
Surface Mount
Pakki / hulstur
SOT-723
Birgir tæki pakki
VESM
Grunnvörunúmer
RN1106

Gagnaablað & Skjöl

Gagnablöð
RN1101MFV Thru RN1106MFV

Aukainformation

Venjulegur pakki
8,000
Önnur nöfn
264-RN1106MFVL3F(TR
RN1106MFV,L3F(CB
264-RN1106MFVL3F(DKR
264-RN1106MFVL3F(CT

Umhverfis- og útflutningsflokkun

Rakanæmi (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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