Framleiðandi Vöru númer:

IRF6811STR1PBF

Product Overview

Framleiðandi:

Infineon Technologies

Völu númer:

IRF6811STR1PBF-DG

Lýsing:

MOSFET N CH 25V 19A DIRECTFET

Mikilvægar upplýsingar:

N-Channel 25 V 19A (Ta), 74A (Tc) 2.1W (Ta), 32W (Tc) Surface Mount DIRECTFET™ SQ

Birgðir:

RFQ á netinu

12806785

Óska eftir tilboði

Magn
Minimum 1

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Við munum hafa samband við þig innan 24 klukkustunda

STILLTA

IRF6811STR1PBF Tæknilegar forskriftir

Flokkur

FETs, MOSFETs, Einn FET, MOSFET

Framleiðandi

Infineon Technologies

Pakkning

-

Röð

HEXFET®

Staða vöru

Obsolete

FET gerð

N-Channel

Tækni

MOSFET (Metal Oxide)

Frárennsli til uppruna spennu (Vdss)

25 V

Núverandi - Stöðugt frárennsli (Id) @ 25 °C

19A (Ta), 74A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds á (Max) @ Id, Vgs

3.7mOhm @ 19A, 10V

Vgs(th) (Max) @ Id

2.1V @ 35µA

Hliðhleðsla (Qg) (hámark) @ Vgs

17 nC @ 4.5 V

Vgs (hámark)

±16V

Inntak rýmd (Ciss) (hámark) @ Vds

1590 pF @ 13 V

FET eiginleiki

-

Afl leiðni (hámark)

2.1W (Ta), 32W (Tc)

Hitastig rekstrar

-40°C ~ 150°C (TJ)

Gerð uppsetningar

Surface Mount

Birgir tæki pakki

DIRECTFET™ SQ

Pakki / hulstur

DirectFET™ Isometric SQ

Gagnaablað & Skjöl

HTML upplýsingaskjal

IRF6811STR1PBF-DG

Gagnaplakks

Gagnablöð

IRF6811S(TR)PbF

Aukainformation

Venjulegur pakki

1,000

Önnur nöfn

SP001524698

IRF6811STR1PBFCT

IRF6811STR1PBFDKR

IRF6811STR1PBFTR

Umhverfis- og útflutningsflokkun

Rakanæmi (MSL)

1 (Unlimited)

REACH staða

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

DIGI vottun

certification_01

certification_02

certification_03

certification_04

certification_015

certification_08

esd

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