IRF6706S2TR1PBF
Framleiðandi Vöru númer:

IRF6706S2TR1PBF

Product Overview

Framleiðandi:

Infineon Technologies

Völu númer:

IRF6706S2TR1PBF-DG

Lýsing:

MOSFET N-CH 25V 17A DIRECTFET
Mikilvægar upplýsingar:
N-Channel 25 V 17A (Ta), 63A (Tc) 1.8W (Ta), 26W (Tc) Surface Mount DirectFET™ Isometric S1

Birgðir:

838 Stk Nýtt Upprunalegt Á Lager
12805106
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IRF6706S2TR1PBF Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Infineon Technologies
Pakkning
Cut Tape (CT)
Röð
HEXFET®
Staða vöru
Obsolete
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
25 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds á (Max) @ Id, Vgs
3.8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Hliðhleðsla (Qg) (hámark) @ Vgs
20 nC @ 4.5 V
Vgs (hámark)
±20V
Inntak rýmd (Ciss) (hámark) @ Vds
1810 pF @ 13 V
FET eiginleiki
-
Afl leiðni (hámark)
1.8W (Ta), 26W (Tc)
Hitastig rekstrar
-55°C ~ 175°C (TJ)
Gerð uppsetningar
Surface Mount
Birgir tæki pakki
DirectFET™ Isometric S1
Pakki / hulstur
DirectFET™ Isometric S1

Gagnaablað & Skjöl

HTML upplýsingaskjal
IRF6706S2TR1PBF-DG
Gagnaplakks
IRF6706S2TR1PBF

Aukainformation

Venjulegur pakki
1,000
Önnur nöfn
IRF6706S2TR1PBFCT
IRF6706S2TR1PBFTR
SP001528294
IRF6706S2TR1PBFDKR

Umhverfis- og útflutningsflokkun

Rakanæmi (MSL)
1 (Unlimited)
REACH staða
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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