IPS110N12N3GBKMA1
Framleiðandi Vöru númer:

IPS110N12N3GBKMA1

Product Overview

Framleiðandi:

Infineon Technologies

Völu númer:

IPS110N12N3GBKMA1-DG

Lýsing:

MOSFET N-CH 120V 75A TO251-3
Mikilvægar upplýsingar:
N-Channel 120 V 75A (Tc) 136W (Tc) Through Hole PG-TO251-3-11

Birgðir:

RFQ á netinu
12803947
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IPS110N12N3GBKMA1 Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Infineon Technologies
Pakkning
-
Röð
OptiMOS™
Staða vöru
Obsolete
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
120 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds á (Max) @ Id, Vgs
11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Hliðhleðsla (Qg) (hámark) @ Vgs
65 nC @ 10 V
Vgs (hámark)
±20V
Inntak rýmd (Ciss) (hámark) @ Vds
4310 pF @ 60 V
FET eiginleiki
-
Afl leiðni (hámark)
136W (Tc)
Hitastig rekstrar
-55°C ~ 175°C (TJ)
Gerð uppsetningar
Through Hole
Birgir tæki pakki
PG-TO251-3-11
Pakki / hulstur
TO-251-3 Stub Leads, IPak

Gagnaablað & Skjöl

HTML upplýsingaskjal
IPS110N12N3GBKMA1-DG
Gagnaplakks
IPS110N12N3GBKMA1

Aukainformation

Venjulegur pakki
1,500
Önnur nöfn
IPS110N12N3GBKMA1TR-DG
IPS110N12N3 G-DG
SP000674456
IPS110N12N3 G

Umhverfis- og útflutningsflokkun

Rakanæmi (MSL)
1 (Unlimited)
REACH staða
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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