IPN50R650CEATMA1
Framleiðandi Vöru númer:

IPN50R650CEATMA1

Product Overview

Framleiðandi:

Infineon Technologies

Völu númer:

IPN50R650CEATMA1-DG

Lýsing:

MOSFET N-CH 500V 9A SOT223
Mikilvægar upplýsingar:
N-Channel 500 V 9A (Tc) 5W (Tc) Surface Mount PG-SOT223-3

Birgðir:

RFQ á netinu
13064104
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IPN50R650CEATMA1 Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Infineon Technologies
Pakkning
-
Röð
CoolMOS™ CE
Umbúðir
Tape & Reel (TR)
Staða hluta
Obsolete
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
500 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds á (Max) @ Id, Vgs
650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Hliðhleðsla (Qg) (hámark) @ Vgs
15 nC @ 10 V
Vgs (hámark)
±20V
Inntak rýmd (Ciss) (hámark) @ Vds
342 pF @ 100 V
FET eiginleiki
-
Afl leiðni (hámark)
5W (Tc)
Hitastig rekstrar
-40°C ~ 150°C (TJ)
Gerð uppsetningar
Surface Mount
Birgir tæki pakki
PG-SOT223-3
Pakki / hulstur
TO-261-4, TO-261AA
Grunnvörunúmer
IPN50R650

Gagnaablað & Skjöl

HTML upplýsingaskjal
IPN50R650CEATMA1-DG
Gagnaplakks
IPN50R650CEATMA1
Gagnablöð
IPN50R650CE

Aukainformation

Venjulegur pakki
3,000
Önnur nöfn
IPN50R650CEATMA1TR
IPN50R650CEATMA1-ND
SP001434880
INFINFIPN50R650CEATMA1
IPN50R650CEATMA1DKR
IPN50R650CEATMA1CT
2156-IPN50R650CEATMA1

Umhverfis- og útflutningsflokkun

RoHS staða
ROHS3 Compliant
Rakanæmi (MSL)
1 (Unlimited)
REACH staða
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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