Framleiðandi Vöru númer:
IPD30N03S4L09ATMA1
Product Overview
Framleiðandi:
Infineon Technologies
Völu númer:
IPD30N03S4L09ATMA1-DG
Lýsing:
MOSFET N-CH 30V 30A TO252-3
Mikilvægar upplýsingar:
N-Channel 30 V 30A (Tc) 42W (Tc) Surface Mount PG-TO252-3-11
Birgðir:
48073 Stk Nýtt Upprunalegt Á Lager
12800246
Óska eftir tilboði
Magn
Minimum 1
Minimum 1
(*) er skylda
Við munum hafa samband við þig innan 24 klukkustunda
Við munum hafa samband við þig innan 24 klukkustunda
STILLTA
IPD30N03S4L09ATMA1 Tæknilegar forskriftir
Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Infineon Technologies
Pakkning
Tape & Reel (TR)
Röð
OptiMOS™
Staða vöru
Active
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
30 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds á (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 13µA
Hliðhleðsla (Qg) (hámark) @ Vgs
20 nC @ 10 V
Vgs (hámark)
±16V
Inntak rýmd (Ciss) (hámark) @ Vds
1520 pF @ 15 V
FET eiginleiki
-
Afl leiðni (hámark)
42W (Tc)
Hitastig rekstrar
-55°C ~ 175°C (TJ)
Gerð uppsetningar
Surface Mount
Birgir tæki pakki
PG-TO252-3-11
Pakki / hulstur
TO-252-3, DPAK (2 Leads + Tab), SC-63
Grunnvörunúmer
IPD30N03
Gagnaablað & Skjöl
Aukainformation
Venjulegur pakki
2,500
Önnur nöfn
IPD30N03S4L-09-DG
IPD30N03S4L-09INTR-DG
IPD30N03S4L-09INCT
IPD30N03S4L-09INCT-DG
IPD30N03S4L-09
IPD30N03S4L09ATMA1CT
SP000415578
INFINFIPD30N03S4L09ATMA1
IPD30N03S4L09ATMA1TR
IPD30N03S4L-09INDKR
IPD30N03S4L-09INDKR-DG
2156-IPD30N03S4L09ATMA1
IPD30N03S4L09
IPD30N03S4L-09INTR
IPD30N03S4L09ATMA1DKR
Umhverfis- og útflutningsflokkun
RoHS staða
ROHS3 Compliant
Rakanæmi (MSL)
1 (Unlimited)
REACH staða
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
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