IMZA65R083M1HXKSA1
Framleiðandi Vöru númer:

IMZA65R083M1HXKSA1

Product Overview

Framleiðandi:

Infineon Technologies

Völu númer:

IMZA65R083M1HXKSA1-DG

Lýsing:

SILICON CARBIDE MOSFET, PG-TO247
Mikilvægar upplýsingar:
N-Channel 650 V 26A (Tc) 104W (Tc) Through Hole PG-TO247-4-3

Birgðir:

32 Stk Nýtt Upprunalegt Á Lager
12966224
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IMZA65R083M1HXKSA1 Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Infineon Technologies
Pakkning
Tube
Röð
CoolSiC™
Staða vöru
Active
FET gerð
N-Channel
Tækni
SiCFET (Silicon Carbide)
Frárennsli til uppruna spennu (Vdss)
650 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds á (Max) @ Id, Vgs
111mOhm @ 11.2A, 18V
Vgs(th) (Max) @ Id
5.7V @ 3.3mA
Hliðhleðsla (Qg) (hámark) @ Vgs
19 nC @ 18 V
Vgs (hámark)
+20V, -2V
Inntak rýmd (Ciss) (hámark) @ Vds
624 pF @ 400 V
FET eiginleiki
-
Afl leiðni (hámark)
104W (Tc)
Hitastig rekstrar
-55°C ~ 175°C (TJ)
Gerð uppsetningar
Through Hole
Birgir tæki pakki
PG-TO247-4-3
Pakki / hulstur
TO-247-4

Gagnaablað & Skjöl

HTML upplýsingaskjal
IMZA65R083M1HXKSA1-DG
Gagnaplakks
IMZA65R083M1HXKSA1
Gagnablöð
IMZA65R083M1H

Aukainformation

Venjulegur pakki
30
Önnur nöfn
448-IMZA65R083M1HXKSA1
SP005423798

Umhverfis- og útflutningsflokkun

RoHS staða
ROHS3 Compliant
Rakanæmi (MSL)
1 (Unlimited)
REACH staða
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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